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Bipolar-unipolar transition in thermospin transport through a graphene-based transistor
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Cross-sectional side view of a ZGNR-based thermospin device, with the local top-gated central scattering region between the source and drain. (b) Local magnetic moment of the FM ZGNR under , with the shaded central region linked with two FM electrodes. (c) and (d) show the spin-dependent current as a function of at under and 0.2 V. The insets in (c) and (d) indicate the moving directions of spin-dependent currents. (e) Band structures of regions S(D) (left) and C (center), and the corresponding transmission function (right) at . ①, ② indicate two states in the Fermi energy. In the transmission function, acts only as a reference, and the shaded areas display transmission blocked energy regions with boudaries , , , . (f) Values of transverse wave function for quantum states ① and ② in (e). The absolute value of is 0.496 for each edge atom.

Image of FIG. 2.
FIG. 2.

(a) Spin current versus at under  K. (b) Spin current as a function of at  K and for ZGNRs with width N = 4, 6, 8.

Image of FIG. 3.
FIG. 3.

(a) MR as a function of under K and , calculated by MR. and are the total thermally induced currents in the ferromagnetic excited state and antiferromagnetic ground state of ZGNR. (b) MR versus under K and .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bipolar-unipolar transition in thermospin transport through a graphene-based transistor