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A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures
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10.1063/1.4748169
/content/aip/journal/apl/101/8/10.1063/1.4748169
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4748169

Figures

Image of FIG. 1.
FIG. 1.

Cross sectional (a) and top view (b) of the fabricated sample. The hatching is the mesa etched region. The sample size is 7 × 7 mm2 and the diameter of center circle is 5 mm.

Image of FIG. 2.
FIG. 2.

Temperature dependence of sheet electron density (a) and mobility (b) for Ti/Al thickness of 100/100 nm. Open and closed circles correspond to increasing and decreasing temperatures, respectively. The arrows show the temperature increase/decrease directions.

Image of FIG. 3.
FIG. 3.

Temperature dependence of sheet electron density (a) and mobility (b) for Ti/Al removed sample. Open and closed circles correspond to increasing and decreasing temperatures, respectively. The arrows show the temperature increase/decrease directions.

Tables

Generic image for table
Table I.

Sheet electron density (n s) and mobility (μ) with varying Ti/Al thickness. n s1 and μ 1 are the initial values and n s2 and μ 2 are after VA ones measured at room temperature. Vacuum annealing were performed at 1020 K except for Ti/Al = 0/100 nm (annealed at 820 K, below the melting point of Al).

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/content/aip/journal/apl/101/8/10.1063/1.4748169
2012-08-24
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4748169
10.1063/1.4748169
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