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CWESR spectra of a substrate 14NV center (a) and a doped 15NV center (b). The curves show three- and two-Lorentizan fits to the respective data.
(a) 13C atomic percentage, inferred from 13C and 12C SIMS measurements of the 13C/12C/13C isotopically layered structure. A schematic of the sample structure is superposed on the SIMS data, showing the 15N doped layer (thickness 2 nm) as a red line at the center of the 15 nm-thick 12C layer. (b), (c) ESEEM measurements of a substrate 14NV center (b) and doped 15NV center (c). The curve in (c) is a fit according to the ESEEM model with two 15N Larmor precession frequency components and depending on the electron spin state.
(a) Schematic of 15N delta-doped 12C films with varying cap layer thickness, c. (b), (c) Hahn echo coherence decay of doped NV centers at d = 5 nm (b) and 52 nm (c). The curves are fits of the form . Uncertainties in T 2 are quoted at 95% confidence.
(a) Summary of T 2 measurements for doped NV centers. (b) Predicted magnetic dipole sensitivity as a function of distance from the doped NV center, r, for the highest-coherence NV center in the d = 5 (red, dash-dot curve) and 21 nm (blue, solid curve) samples. We assume r || , such that d is the minimum separation. The required sensitivities for detecting single electron and proton spins with 1 s averaging are shown as dashed lines. Inset: schematic of a doped NV center probe (symmetry axis ) in the diamond sample and an external spin at displacement r. The dashed curve is an iso-sensitivity contour, assuming the external spin is oriented to optimize the sensitivity for each displacement angle, θ.
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