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Light down-conversion with over 100% external quantum efficiency in bulk germanium
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10.1063/1.4748362
/content/aip/journal/apl/101/8/10.1063/1.4748362
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4748362
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Figures

Image of FIG. 1.
FIG. 1.

(a) Experimental setup. 1, diode laser; 2, modulator; 3, Ge wafer; 4, heater; 5, monochromator; 6, pyroelectric detector. (b) TE pattern from pumped Ge wafer (λin  = 1.9 μm) captured with thermal imaging camera at T = 380 K. (c) TE output pattern in polar coordinates. (d) Snapshot of moving object with T > Tb captured with thermal imaging camera.

Image of FIG. 2.
FIG. 2.

Spectral dependence of TE output for Ge wafer (1, pump is off; 2, pump is on; 3, modulated part of TE output; 4, maximum modulated TE output). 1, 2, 3—experiment, 4—calculation. Curves 1, 2, 4 relate to the left scale. Inset: Measured TE relaxation curves for Ge and Si wafers after pump (λin  = 1.09 μm) is off.

Image of FIG. 3.
FIG. 3.

Measured temperature dependence of PCE for Ge (1, 2) and Si (3) pumped with λin  = 1.9 μm (1) and λin  = 1.09 μm (2, 3). Inset: Measured TE output versus input power (λin  = 1.9 μm).

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/content/aip/journal/apl/101/8/10.1063/1.4748362
2012-08-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light down-conversion with over 100% external quantum efficiency in bulk germanium
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4748362
10.1063/1.4748362
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