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Vertically stacked individually tunable nanowire field effect transistors for low power operation with ultrahigh radio frequency linearity
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10.1063/1.4747448
/content/aip/journal/apl/101/9/10.1063/1.4747448
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4747448
/content/aip/journal/apl/101/9/10.1063/1.4747448
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/content/aip/journal/apl/101/9/10.1063/1.4747448
2012-08-30
2014-11-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertically stacked individually tunable nanowire field effect transistors for low power operation with ultrahigh radio frequency linearity
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4747448
10.1063/1.4747448
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