Full text loading...
(a) and (b) Schematic of p +-n 0-p + SiNW (a), with the corresponding SiNW etched selectively in TMAH solution (b). (c) SEM image of the selectively etched p +-n 0-p + SiNW; the SiNW channel has an L ch of ∼500 nm and a d nw of ∼50 nm. (d) Photograph and optical microscope image of the p-SNWT on a plastic substrate; a high-κ Al2O3 gate dielectric and a W-gate electrode were used.
(a) I ds − V gs plots of the p-SNWT with an L ch of ∼500 nm for V ds of −50 mV and −1 V on a log scale (left y-axis), along with a linear scale plot for V ds of −50 mV (right y-axis); to observe I ds degradation at a high transverse electric field, V gs was swept from 0 to −1.5 V. (b) I ds − V ds plots with V gs as a parameter.
(a) and (b) I ds − V gs plots of the p-SNWTs with three different L chs, viz., 1, 0.5, and 0.2 μm, for V ds = −50 mV on a linear scale (a) and the corresponding g m plots (b). (c) and (d) Y-function characteristics of the p-SNWTs with different L chs as a function of V gs (c) and the corresponding F-function characteristics.
(a) Θ1eff − U 0 plots for the p-SNWTs with different L chs; note that the slope of the linear regression line gives R sd, and the y-intercept gives Θ1. (b) Extracted R ch,eff among the p-SNWTs with different L chs as a function ofV gt.
Fits (solid lines) of (a) I ds − V gs (at V ds = −50 mV) and (b) g m measurements (symbol) by the extracted.
Electrical parameters extracted from the p-SNWTs with different L chs.
Article metrics loading...