Full text loading...
Schematic illustration of the MWA system used in the work.
Variations of Rs (left vertical axis) and average resistivity (right vertical axis) with annealing temperature for the two sets of samples annealed by MWA (open squares) and RTP (filled squares).
XTEM micrographs showing samples annealed at 400 °C with (a) MWA and (b) RTP, and at 515 °C with (c) MWA and (d) RTP.
(a) XTEM micrograph and (b) corresponding EDS line-scan data of the depth distribution of Ni, Si, and Ge for the MWA sample annealed at 515 °C. Similarly, (c) XTEM micrograph and (d) corresponding EDS line-scan data for the RTP sample annealed at 515 °C.
HRRLM data of the remaining Si0.81Ge0.19 films after annealing the Ni/Si0.81Ge0.19 structure at (a) 284 °C by RTP, (b) 284 °C by MWA, (c) 515 °C by RTP, and (d) 515 °C by MWA.
Misfit parameters along (Fz ) and perpendicular to (Fx , y ) the growth direction, leading to estimation of the degree of relaxation (R).
Article metrics loading...