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Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing
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10.1063/1.4748111
/content/aip/journal/apl/101/9/10.1063/1.4748111
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4748111

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the MWA system used in the work.

Image of FIG. 2.
FIG. 2.

Variations of Rs (left vertical axis) and average resistivity (right vertical axis) with annealing temperature for the two sets of samples annealed by MWA (open squares) and RTP (filled squares).

Image of FIG. 3.
FIG. 3.

XTEM micrographs showing samples annealed at 400 °C with (a) MWA and (b) RTP, and at 515 °C with (c) MWA and (d) RTP.

Image of FIG. 4.
FIG. 4.

(a) XTEM micrograph and (b) corresponding EDS line-scan data of the depth distribution of Ni, Si, and Ge for the MWA sample annealed at 515 °C. Similarly, (c) XTEM micrograph and (d) corresponding EDS line-scan data for the RTP sample annealed at 515 °C.

Image of FIG. 5.
FIG. 5.

HRRLM data of the remaining Si0.81Ge0.19 films after annealing the Ni/Si0.81Ge0.19 structure at (a) 284 °C by RTP, (b) 284 °C by MWA, (c) 515 °C by RTP, and (d) 515 °C by MWA.

Tables

Generic image for table
Table I.

Misfit parameters along (Fz ) and perpendicular to (Fx , y ) the growth direction, leading to estimation of the degree of relaxation (R).

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/content/aip/journal/apl/101/9/10.1063/1.4748111
2012-08-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4748111
10.1063/1.4748111
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