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SEM image of a SG-GFET (device A). The large dark regions on the left and right are the drain and source pads (D, S), and the dark regions above and below the graphene channel are the side-gate (G) pads. For the electrical characterization, the lower gate has been biased while the upper gate has been inactive.
Output characteristics (left) and transfer characteristics (right) of the device from Fig. 1 (device A).
Transconductance g m of two SG-GFETs as a function of the drain voltage. The inset shows the maximum transconductance of device A as a function of gate voltage.
Maximum transconductance measured at drain voltage V D, electrostatic gate capacitance per unit area, and gate dielectric data of TG-GFETs from the literature and SG-GFETs from the present work. epi: epitaxial graphene, CVD: CVD grown graphene, ex: exfoliated graphene, t.w. A: this work device A, t. w. B: this work device B.
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