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AFM images of 5 nm thick FePt deposited at (a) 13 °C and (b) 520 °C. (c) Rv and ratio of the integrated intensity of FePt  to the  peak as a function of temperature. (d) Series of hysteresis loops for 5 nm thick FePt deposited at different temperatures.
AFM image (a) of and out-of-plane as well as in-plane hysteresis loop (b) for a 3 nm thick FePt film annealed in vacuum.
AFM images of FePt surfaces are shown (after deposition, annealing, and removal of SiO2 by RIE) for etch times of (a) 5 s and (b) 10 s.
Out-of-plane hysteresis loops (a), in-plane hysteresis loops (b), normalized out-of-plane hysteresis loops (c), a plot of in-plane Mr/Ms (d), out-of-plane XRD (e), and in-plane XRD (f) for 3, 5, 7.5, and 10 nm thick FePt films.
Out-of-plane hysteresis loops for a FePt(3 nm)/SiO2(6 nm) film after each of the following successive steps in the formation of an ECC structure: annealing, RIE, sputter cleaning for 30 s or 60 s and ML deposition.
Normalized hysteresis loops for a FePt/SiO2 film after deposition and patterning.
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