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High output current in vertical polymer space-charge-limited transistor induced by self-assembled monolayer
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FIG. 1.

(a) The chemical structure of RR-P3HT. (b) The process flow chart of fabricating vertical polymer transistors. (c) The J - V characteristics of spin-coated P3HT EC diodes without and with OTS-18 treatment. (d) The J - V characteristics of blade-coated P3HT EC diodes without and with OTS-18 treatment, with different P3HT thickness of 350 nm and 450 nm. (e) The hole mobility fitted from the current-voltage relation of space-charge-limited current.

Image of FIG. 2.

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FIG. 2.

SEM cross-section images of (a) the spin-coated P3HT EC diode without OTS-18 treatment; (b) the blade-coated P3HT EC diode without OTS-18 treatment; (c) the blade-coated P3HT EC diode with OTS-18 treatment; (d) the blade-coated P3HT EC diode with OTS-18 treatment.

Image of FIG. 3.

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FIG. 3.

(a) Out-of-plane GIXRD measurement graphs for blade-coated P3HT on STD and on OTS-18-treated templates before removing P3HT above the porous templates; (b) the graphs for the samples after using oxygen plasma to etch away P3HT above the porous template; and (c) the PL spectra of blade-coated P3HT on STD and on OTS-treated templates after plasma etching.

Image of FIG. 4.

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FIG. 4.

(a) The average output current densities (J) measured at V = −2 V and V = −0.9 V of various SCLTs. Error bars represent the standard deviations obtained from at least 3 samples. (b) The J - V curves of blade-coated SCLT with OTS-18 treatment measured at different V. (c) The J - V curves and base leakage current, J of blade-coated SCLT measured at different V.

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/content/aip/journal/apl/101/9/10.1063/1.4748284
2012-08-30
2014-04-19

Abstract

We present a promising solution-processed vertical transistor which exhibits high output current, high on/off current ratio, and low operation voltage. Numerous poly(3-hexylthiophene) vertical channels are embedded in vertical nanometer pores. Treating the sidewalls of pores by self-assemble monolayer with long alkyl chains enhances the pore-filling and inter-chain order of poly(3-hexylthiophene). The channel current is therefore greatly increased. A grid metal inside the porous template controls the channel potential profile to turn on and turn off the vertical transistor. Finally, the transistor delivers an output current density as 50–110 mA/cm2 at 2 V with an on/off current ratio larger than 10 000.

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Scitation: High output current in vertical polymer space-charge-limited transistor induced by self-assembled monolayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4748284
10.1063/1.4748284
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