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High output current in vertical polymer space-charge-limited transistor induced by self-assembled monolayer
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/content/aip/journal/apl/101/9/10.1063/1.4748284
2012-08-30
2014-08-01

Abstract

We present a promising solution-processed vertical transistor which exhibits high output current, high on/off current ratio, and low operation voltage. Numerous poly(3-hexylthiophene) vertical channels are embedded in vertical nanometer pores. Treating the sidewalls of pores by self-assemble monolayer with long alkyl chains enhances the pore-filling and inter-chain order of poly(3-hexylthiophene). The channel current is therefore greatly increased. A grid metal inside the porous template controls the channel potential profile to turn on and turn off the vertical transistor. Finally, the transistor delivers an output current density as 50–110 mA/cm2 at 2 V with an on/off current ratio larger than 10 000.

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Scitation: High output current in vertical polymer space-charge-limited transistor induced by self-assembled monolayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4748284
10.1063/1.4748284
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