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The electronic energy band structure for three m/n SLs. The conduction- and valence-band edge profiles are shown for (a)—1/5, (b)—1/9, and (c)—3/7 SLs. Each bar corresponds to one InN or GaN layer. The InN MLs are shaded (red).
Calculated band gaps, Eg, for mInN/nGaN SLs vs. In cation fraction, x = m/(m + n), compared with calculations performed for In x Ga 1−x N alloys (asterisks and the dashed curve, “uniform In distribution”).14,17 In the inset, the gaps for 1/n SLs as obtained for the “free-standing”5 and “pseudomorphic” (present) growth modes are compared. Lines are spline fits to the calculated values.
Calculated band gap pressure coefficients, dEg/dp, for m/n SLs vs. In cation fraction, x = m/(m + n), compared with calculations performed for InxGa1−xN alloys (the dashed curve, “uniform In distribution,” Ref. 17).
The magnitudes of the electric fields (in MV/cm) in “pseudomorphic” mInN/nGaN(0001) SLs, as determined from the N-1s core state energies. The values in parentheses are for the “free-standing” case (Ref. 5).
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