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Nucleation features and energy levels of type-II InAsSbP quantum dots grown on InAs(100) substrate
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10.1063/1.4748574
/content/aip/journal/apl/101/9/10.1063/1.4748574
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4748574

Figures

Image of FIG. 1.
FIG. 1.

(a) and (b) SEM and AFM images of InAsSbP QDs grown by LPE on InAs (100) surface (sample 1), (S = 17 × 17 μm2); (c), (d) enlarged view of the region denoted by black cycle and the line scan; (e), (f) AFM topography images of QDs coalescence and coarsening.

Image of FIG. 2.
FIG. 2.

High resolution SEM image (a) of the ellipsoidal InAsSbP QDs grown by LPE on InAs (100) surface (sample 2) (S = 1.7 × 1.7 μm2), (b), (c) AFM images with line scans.

Image of FIG. 3.
FIG. 3.

(a), (b) QDs’ heights distribution for thesample 1 and sample 2 (S = 5 × 5 μm2); (c), (d) the QDs histograms and approximation fits by the Gram-Charlier function (sample 1) and the Gaussian (sample 2), respectively.

Image of FIG. 4.
FIG. 4.

(a) the PL spectra of all three samples at T = 78 K, and (b) the room temperature EL spectra of sample 3 at different direct currents passing through the p-n junction.

Image of FIG. 5.
FIG. 5.

(a) T = 78 K sheet resistance of sample 1 versus magnetic field applied perpendicular to the substrate surface, (b) the derivative of (a).

Image of FIG. 6.
FIG. 6.

The capacitance–voltage characteristic of sample 1 at T = 78 K and f = 106 Hz frequency.

Tables

Generic image for table
Table I.

InAsSbP QDs holes eigenenergies with respect to the InAs valence band edge.

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/content/aip/journal/apl/101/9/10.1063/1.4748574
2012-08-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation features and energy levels of type-II InAsSbP quantum dots grown on InAs(100) substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4748574
10.1063/1.4748574
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