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(a) and (b) SEM and AFM images of InAsSbP QDs grown by LPE on InAs (100) surface (sample 1), (S = 17 × 17 μm2); (c), (d) enlarged view of the region denoted by black cycle and the line scan; (e), (f) AFM topography images of QDs coalescence and coarsening.
High resolution SEM image (a) of the ellipsoidal InAsSbP QDs grown by LPE on InAs (100) surface (sample 2) (S = 1.7 × 1.7 μm2), (b), (c) AFM images with line scans.
(a), (b) QDs’ heights distribution for thesample 1 and sample 2 (S = 5 × 5 μm2); (c), (d) the QDs histograms and approximation fits by the Gram-Charlier function (sample 1) and the Gaussian (sample 2), respectively.
(a) the PL spectra of all three samples at T = 78 K, and (b) the room temperature EL spectra of sample 3 at different direct currents passing through the p-n junction.
(a) T = 78 K sheet resistance of sample 1 versus magnetic field applied perpendicular to the substrate surface, (b) the derivative of (a).
The capacitance–voltage characteristic of sample 1 at T = 78 K and f = 106 Hz frequency.
InAsSbP QDs holes eigenenergies with respect to the InAs valence band edge.
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