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(a) Schematic diagram of the device structure. (b) Cross-sectional TEM image of the Au electrode and CNT film.
(a) Survey PES spectrum of a CNT film (∼300 nm thick) formed on n-type 6H-SiC(000-1) by surface decomposition measured with hν = 350 eV. The insets show (left) a schematic diagram of the sample structure, and (right) the C 1s spectrum. (b) PES spectra near the Fermi edge of a CNT film (∼300 nm thick) on n-type 6H-SiC(000-1) (solid red circles) and Au (solid black line) measured with hν = 60 eV. The binding energy is relative to the Fermi edge of Au.
(a) C 1s PES spectrum of CNTs (∼3 nm thick) formed on n-type 6H-SiC(000-1) measured with hν = 350 eV. (b) Valence band PES spectrum for n-type 6H-SiC(000-1) measured with hν = 60 eV.
(a) Schematic representation of the band alignment at a CNT/n-type 6H-SiC heterojunction. (b) I-V characteristics of a CNT/n-type 6H-SiC heterojunction measured by applying a bias voltage between Au and Ni electrodes. The bias voltage is positive when the CNTs are positively biased, and the device structures with the direction of electric current flow are shown in the insets.
Binding energy, FWHM, and ratio of Lorentzian to Voigt line shape (L) used in the core level fitting, and the binding energy of the VBM determined by linear extrapolation.
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