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Schematic diagram of the experimental setup for time-resolved and time-integrated photoluminescence.
A typical steady-state fluorescence spectra obtained from intentional indium doped Cd0.8Zn0.2Te:In (a) and Cd0.8Zn0.2Te crystals (b). Red and green solid line: fits to spectra with Gauss function curves.
Pump energy (P) dependent emission spectra from intentional indium doped Cd0.8Zn0.2Te:In (a) and Cd0.8Zn0.2Te crystals (b). The arrows show the increase of pump energy.
Pump energy dependence of the peak intensity at 788 nm (blue symbol) and 770 nm (green symbol) from Cd0.8Zn0.2Te: In and at 770 nm (red symbol) from Cd0.8Zn0.2Te for the pump energy up to 29.03 μJ. Each trace is the average of several traces recorded at each pump energy. Respectively, the blue solid line represents fits to the data of the form and for spontaneous emission and superfluorescence at 788 nm from Cd0.8Zn0.2Te:In. The green and the red solid line represents fits to the datafor spontaneous emissions at 770 nm from Cd0.8Zn0.2Te:In and Cd0.8Zn0.2Te, respectively.
(a) Decay dynamics processes of the emission at 750 nm (black line), at 770 nm (red line), and at 788 nm (blue line) from Cd0.8Zn0.2Te:In crystal at the pump energy of 18.23 μJ. The inset shows normalized decay curves for observing delay of the initial rise. (b) Pump energy dependence of normalized decay curves at the emission of 788 nm. The inset shows pump energy dependence of mean output pulse width. The red solid line represents fits to the data of the form for the mean output pulse width.
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