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Electrical and Fourier transform infrared properties of epitaxial SmNiO3 tensile strained thin film
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10.1063/1.4748982
/content/aip/journal/apl/101/9/10.1063/1.4748982
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4748982
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Figures

Image of FIG. 1.
FIG. 1.

(a) diffractogram of a SNO (120 nm tick) film obtained at an oxygen pressure of 300 mTorr and a substrate temperature of 600 °C on a STO substrate. (b) -scan of the SNO 〈111〉 family reflection. (c) Reciprocal space mapping around the (104)pc peak. The splitting of substrate peak results from the polychromatic x-ray source (Cu K and Cu K lines).

Image of FIG. 2.
FIG. 2.

(a) Temperature dependence of the resistivity for SNO thin film grown on STO substrate. (b) Derivative of resistivity. TMI corresponds to the temperature at which the sign of changes.10,14

Image of FIG. 3.
FIG. 3.

Change of mid-infrared transmittance spectra across the transition phase of SNO on STO substrate. The inset displays infrared transmittance vs. temperature obtained at λ = 4 μm and λ = 6 μm.

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/content/aip/journal/apl/101/9/10.1063/1.4748982
2012-08-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and Fourier transform infrared properties of epitaxial SmNiO3 tensile strained thin film
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/9/10.1063/1.4748982
10.1063/1.4748982
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