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Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy
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10.1063/1.4772508
/content/aip/journal/apl/102/1/10.1063/1.4772508
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4772508
/content/aip/journal/apl/102/1/10.1063/1.4772508
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/content/aip/journal/apl/102/1/10.1063/1.4772508
2013-01-08
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4772508
10.1063/1.4772508
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