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Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
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10.1063/1.4773558
/content/aip/journal/apl/102/1/10.1063/1.4773558
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4773558
/content/aip/journal/apl/102/1/10.1063/1.4773558
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/content/aip/journal/apl/102/1/10.1063/1.4773558
2013-01-04
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4773558
10.1063/1.4773558
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