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Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
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10.1063/1.4773558
/content/aip/journal/apl/102/1/10.1063/1.4773558
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4773558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Calculated band energy diagram of (a) conventional LED and (b) HIL LED at a current density of 100 A/cm2.

Image of FIG. 2.
FIG. 2.

Calculated (a) electron concentration, (b) hole concentration distribution, and (c) radiative recombination rate of conventional and HIL LED at a current density of 100 A/cm2.

Image of FIG. 3.
FIG. 3.

SIMS profile of the HIL LED.

Image of FIG. 4.
FIG. 4.

Forward voltage and output power as a function of current for conventional and HIL LED.

Image of FIG. 5.
FIG. 5.

Efficiency droop of conventional and HIL LED.

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/content/aip/journal/apl/102/1/10.1063/1.4773558
2013-01-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4773558
10.1063/1.4773558
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