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(a) Axis convention employed for the structures. Vectors a and b are the two in-plane axes. Samples S1 and S2 are with and , respectively. (b) Transmission electron microscopy image of sample S1.
X-ray diffraction reciprocal space maps around the asymmetric (224) Bragg reflection of vicinal sample S1.
Raman spectra showing the presence of compressively Si top layer for samples S1 and S2 as indicated by the arrows. The unstrained peak at is assigned to the Si substrate.
Ex situ reflectance difference spectra of samples S1(a), S2(b), and S3(c). Spectrum (d) corresponds to a bare vicinal oxidized Si(001) substrate misoriented 5° toward . Dashed lines indicate the position of unperturbed , , and optical transitions of bulk Si. Spectrum (c) was vertically displaced for the sake of clarity.
Experimental reflectance difference spectra of sample S1 (dots) with the fit using the developed strain model. Arrows indicate the positions of the perturbed , and optical transitions.
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