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Reflectance anisotropies of compressively strained Si grown on vicinal (001)
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Axis convention employed for the structures. Vectors a and b are the two in-plane axes. Samples S1 and S2 are with and , respectively. (b) Transmission electron microscopy image of sample S1.

Image of FIG. 2.
FIG. 2.

X-ray diffraction reciprocal space maps around the asymmetric (224) Bragg reflection of vicinal sample S1.

Image of FIG. 3.
FIG. 3.

Raman spectra showing the presence of compressively Si top layer for samples S1 and S2 as indicated by the arrows. The unstrained peak at is assigned to the Si substrate.

Image of FIG. 4.
FIG. 4.

Ex situ reflectance difference spectra of samples S1(a), S2(b), and S3(c). Spectrum (d) corresponds to a bare vicinal oxidized Si(001) substrate misoriented 5° toward [110]. Dashed lines indicate the position of unperturbed , , and optical transitions of bulk Si. Spectrum (c) was vertically displaced for the sake of clarity.

Image of FIG. 5.
FIG. 5.

Experimental reflectance difference spectra of sample S1 (dots) with the fit using the developed strain model. Arrows indicate the positions of the perturbed , and optical transitions.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reflectance anisotropies of compressively strained Si grown on vicinal Si1−xCx(001)