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Buffer layer induced band gap and surface low energy optical phonon scattering in epitaxial graphene on SiC(0001)
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10.1063/1.4773568
/content/aip/journal/apl/102/1/10.1063/1.4773568
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4773568

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of electrical conductivity for the epitaxial graphene grown on Si-face SiC substrate (samples A and B), C-face SiC substrate (sample C), and quasi-free-standing graphene (sample D).

Image of FIG. 2.
FIG. 2.

Temperature dependence of carrier density for the epitaxial graphene grown on Si-face SiC substrate (samples A and B), C-face SiC substrate (sample C), and quasi-free-standing graphene (sample D). Samples A, B, and C are n-type. Sample D is p-type.

Image of FIG. 3.
FIG. 3.

(a) HRTEM image of sample B, (b) details of marked region in (a), and (c) interplanar spacing along the line marked in (b).

Image of FIG. 4.
FIG. 4.

Schematic diagram of the atomic arrangements and corresponding band structures of epitaxial graphene grown on Si-face and C-face SiC substrates, and quasi-free-standing graphene on SiC.

Image of FIG. 5.
FIG. 5.

Temperature dependence of Hall mobility for epitaxial graphene grown on Si-face SiC substrate (samples A and B), C-face SiC substrate (sample C), and quasi-free-standing graphene (sample D).

Image of FIG. 6.
FIG. 6.

Simulation of the Hall mobility vs. temperature for sample A (a), and sample C (b). Mobility limited by μ gr, μ c, μ sr, μ RP, and total mobility μ are shown as black dashed line, red dashed dotted line, blue dashed dotted dotted line, olive dotted line, and magenta solid line, respectively.

Tables

Generic image for table
Table I.

Sample names, band gap E g, optical phonon energy E op, terminated faces of SiC, and growth conditions for the graphene samples.

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/content/aip/journal/apl/102/1/10.1063/1.4773568
2013-01-07
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Buffer layer induced band gap and surface low energy optical phonon scattering in epitaxial graphene on SiC(0001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4773568
10.1063/1.4773568
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