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Quantum Hall transport as a probe of capacitance profile at graphene edges
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10.1063/1.4773589
/content/aip/journal/apl/102/1/10.1063/1.4773589
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4773589
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of electric field focusing and spatial extension of edge channels. (a) Electric field lines are focused near the edges of a 2DEG (top plate), which is electrostatically doped via a gate electrode (bottom plate). (b) Semiclassical description of a two-terminal device. One possible skipping orbit with cyclotron diameter dP probes a spatial region x from the edge of the device.

Image of FIG. 2.
FIG. 2.

Modeling the effect of electric field focusing near the edge on the capacitance of quantum Hall plateaus, for an infinitely wide and long 2DEG suspended in vacuum 1 μm over the gate. The solid line shows the calculated near the edge, whereas the dashed line shows the value for a simple parallel plate capacitor. Symbols correspond to , for filling factors , 6, 10, and 14 (proper for single layer graphene, see Ref. 6 ) at different values of B. Inset: position of quantum Hall plateaus on .

Image of FIG. 3.
FIG. 3.

Capacitance profile near the edges of high quality graphene samples. (a) Suspended bilayer graphene, 2.6 μm long, 0.4 μm wide, with a gate dielectric of 500 nm plus 1.15 μm vacuum. (b) Single layer graphene supported on h-BN, 2.5 μm long, 2 μm wide, with a gate dielectric of 500 nm plus h-BN. For both (a) and (b), symbols correspond to the experimental capacitance of individual plateaus versus . Filled symbols are for hole transport and open symbols are for electron transport. Dashed lines show for a simple parallel plate capacitor. Solid lines show the calculated from a three-dimensional electrostatic model averaged along the length of the graphene, scaled by a factor of 0.8 (a) or 0.7 (b). The insets show raw data for a fixed B field, with the vertical dotted lines indicating .

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/content/aip/journal/apl/102/1/10.1063/1.4773589
2013-01-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum Hall transport as a probe of capacitance profile at graphene edges
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4773589
10.1063/1.4773589
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