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(a) Schematic top view and cross-sectional view of a PC slab and a nanocavity. (b) Cross-sectional view of the whole structure. (c) Electric-field intensity of the resonant mode of the PCNC calculated using the FDTD method.
(a) Schematic view of cross-marks and reference points made on the GaAs wafer. The cross-marks have arms of length 31 mm, and the reference point diameter is 800 nm. (b) Schematic view of the μ-PL setup used to detect the positions and wavelengths of QDs. An 830-nm continuous wave laser was used for excitation. (c) PL image of the QDs and positioning markers. The scale is the same as in (a).
(a) Histogram of the errors of the position-detection method. (b) Experimentally determined resonant wavelength of nanocavities as a function of PC lattice constant. The solid line indicates a least-squares fit, and the dashed lines are ± 2.7 nm from the solid line.
PL spectra of a QD before (a) and after (b) PC fabrication. The emission peak of the cavity mode is at 946.8 nm. (c) 2D PL spectra plot of a QD and nanocavity with various detunings. Inset: PL spectrum at the point where the QD and the cavity peak showed anti-crossing. The splitting width was 0.067 nm.
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