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Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
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View: Figures


Image of FIG. 1.
FIG. 1.

Raman spectra showing the region around the TO and LO peaks for 1 μm thick SiC(100) and SiC(111) films. Both spectra show a red shift of the TO peaks as compared to unstressed 3C-SiC films, with TO peak at 796 cm−1, indicating residual tensile stress.

Image of FIG. 2.
FIG. 2.

Residual stress as estimated from wafer curvature measurements for epitaxial 3C-SiC films grown on Si(100) and Si(111) substrates. Films on Si(111) retain a much higher residual tensile stress showing only a marginal decrease versus film thickness. Inversely, films on Si(100) show substantially lower stress and the data trends indicate a clear decrease versus thickness.

Image of FIG. 3.
FIG. 3.

TEM micrographs of 300 nm thick epitaxial 3C-SiC films on (a) SiC(100) and (b) Si(111), showing a 55° and 70° inclination, respectively, of SF over their growth planes. Note that the interface between the SiC and Si(100) in (a) was contaminated by glue during samples preparation. The AFM images in (c) and (d) show the corresponding surfaces of the SiC(100) and SiC(111) films, respectively.

Image of FIG. 4.
FIG. 4.

Average stresses of 300 nm thick SiC(111) films grown (1) with the basic process of Fig. 1 , (2) with a 1050 °C growth temperature (higher growth T), (3) with a 750 °C carbonisation temperature (lower carb T). Residual stresses increase with increasing temperatures involved in the growth process.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films