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Raman spectra showing the region around the TO and LO peaks for 1 μm thick SiC(100) and SiC(111) films. Both spectra show a red shift of the TO peaks as compared to unstressed 3C-SiC films, with TO peak at 796 cm−1, indicating residual tensile stress.
Residual stress as estimated from wafer curvature measurements for epitaxial 3C-SiC films grown on Si(100) and Si(111) substrates. Films on Si(111) retain a much higher residual tensile stress showing only a marginal decrease versus film thickness. Inversely, films on Si(100) show substantially lower stress and the data trends indicate a clear decrease versus thickness.
TEM micrographs of 300 nm thick epitaxial 3C-SiC films on (a) SiC(100) and (b) Si(111), showing a 55° and 70° inclination, respectively, of SF over their growth planes. Note that the interface between the SiC and Si(100) in (a) was contaminated by glue during samples preparation. The AFM images in (c) and (d) show the corresponding surfaces of the SiC(100) and SiC(111) films, respectively.
Average stresses of 300 nm thick SiC(111) films grown (1) with the basic process of Fig. 1 , (2) with a 1050 °C growth temperature (higher growth T), (3) with a 750 °C carbonisation temperature (lower carb T). Residual stresses increase with increasing temperatures involved in the growth process.
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