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Resistive switching of oxygen enhanced TiO2 thin-film devices
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Top view SEM image denoting the active area and interfacing TE and BE of a single device; (b) optical microscope image of a crossbar-type array comprising of devices shown in (a).

Image of FIG. 2.
FIG. 2.

I-V characteristics of devices based on stoichiometric TiO2 active layer (a) prior electroforming and (b) after electroforming.

Image of FIG. 3.
FIG. 3.

SIMS measurements of the two extreme scenarios tested in this work. Sample 1 corresponds to stoichiometric TiO2, while sample 2 was deposited reactively in an O2-rich environment of partial Ar/O2 pressure 2/10 sccm.

Image of FIG. 4.
FIG. 4.

I-V characteristics of a Pt/TiO2+x1/Pt RRAM cell, where x1 denotes a low O2 concentration, due to an Ar/O2 partial pressure of 6/6 sccm.

Image of FIG. 5.
FIG. 5.

I-V characteristics of a Pt/TiO2+x2/Pt RRAM cell, where x2 denotes a high O2 concentration; with x2 > x1.

Image of FIG. 6.
FIG. 6.

Histograms of (a) the threshold voltage (VT) and (b) OFF/ON ratios vs. VT at which the switching occurred for two TiO2 investigated samples deposited under different partial Ar/O2 flows.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching of oxygen enhanced TiO2 thin-film devices