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Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
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10.1063/1.4774400
/content/aip/journal/apl/102/1/10.1063/1.4774400
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4774400
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD pattern of ZnO thin film deposited on Pt/Ti/SiO2/Si substrate. (b) The cross-section SEM image of a ZnO/Pt/Ti/SiO2/Si structure.

Image of FIG. 2.
FIG. 2.

Typical IV characteristics of Al/ZnO/Pt device. The inset shows the schematic structure for electrical measurement of Al/ZnO/Pt device. After the forming sweep (0 → 5 V), a reset-set cycle is displayed. The resistance state is changed from LRS to HRS above the bias of −1 V (reset) and changed from HRS to LRS above the bias of 3 V (set).

Image of FIG. 3.
FIG. 3.

Typical I–V curves of Al/ZnO/Pt device plotted in double logarithmic scale in negative (a) and positive (b) sweeping voltage. The colorful lines show the fitting results.

Image of FIG. 4.
FIG. 4.

(a) Endurance test for 50 consecutive reset-set cycles, readout at 0.1 V. (b) Retention tests of HRS and LRS after the reset and set, respectively, readout at 0.1 V.

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/content/aip/journal/apl/102/1/10.1063/1.4774400
2013-01-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4774400
10.1063/1.4774400
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