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(a) XRD pattern of ZnO thin film deposited on Pt/Ti/SiO2/Si substrate. (b) The cross-section SEM image of a ZnO/Pt/Ti/SiO2/Si structure.
Typical IV characteristics of Al/ZnO/Pt device. The inset shows the schematic structure for electrical measurement of Al/ZnO/Pt device. After the forming sweep (0 → 5 V), a reset-set cycle is displayed. The resistance state is changed from LRS to HRS above the bias of −1 V (reset) and changed from HRS to LRS above the bias of 3 V (set).
Typical I–V curves of Al/ZnO/Pt device plotted in double logarithmic scale in negative (a) and positive (b) sweeping voltage. The colorful lines show the fitting results.
(a) Endurance test for 50 consecutive reset-set cycles, readout at 0.1 V. (b) Retention tests of HRS and LRS after the reset and set, respectively, readout at 0.1 V.
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