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An extended defect as a sensor for free carrier diffusion in a semiconductor
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10.1063/1.4775369
/content/aip/journal/apl/102/1/10.1063/1.4775369
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4775369
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Plan-view confocal PL maps of an isolated dislocation in GaAs over a wide range of photoexcitation intensities Iex . (Iex values do not include reflection loss.) Greyscale values are estimates of radiative efficiency—the ratio of photons emitted to photons absorbed.

Image of FIG. 2.
FIG. 2.

Plan-view confocal PL maps of the same site examined in Fig. 1 after illumination altered the physical character of the extended defect. Please note the changes in photoexcitation range and magnification relative to those used in Fig. 1 .

Image of FIG. 3.
FIG. 3.

Radial profiles of the PL contrast maps shown in Figs. 1 and 2 .

Image of FIG. 4.
FIG. 4.

(a) Detailed PL contrast profiles of the lowest excitation maps after laser modification. Note the clear change from single to double exponential behavior as the excitation intensity is reduced. (b) Effective diffusion lengths before and after modification derived from the exponential fits shown in Figs. 3 and (a). Note that the double exponential fit in (a) produces 2 effective lengths for the lowest excitation post-modification result.

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/content/aip/journal/apl/102/1/10.1063/1.4775369
2013-01-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An extended defect as a sensor for free carrier diffusion in a semiconductor
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4775369
10.1063/1.4775369
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