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Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices
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10.1063/1.4775371
/content/aip/journal/apl/102/1/10.1063/1.4775371
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4775371

Figures

Image of FIG. 1.
FIG. 1.

(a) Room temperature photocurrent absorption spectra demonstrate 40 nm shift of GaInAsSb QW exciton under −3.5 V bias applied from initial 1165 nm at 0.0 V. (b) Over 12 dB extinction ratio of an optical absorption has been observed at 35-40 nm longer wavelengths.

Image of FIG. 2.
FIG. 2.

(a) method calculation of QCSE under external electric field (0-224 kV/cm) corresponding to the experiment performed showing a field induced electron tunneling through the triangular GaAs barrier. (b) A quadratic dependence of a peak wavelength position on increasing total electric field showing 40 nm redshift.

Image of FIG. 3.
FIG. 3.

Schematic of the GaInAsSb/GaAs QW model used for carrier relaxation and escape mechanisms.

Image of FIG. 4.
FIG. 4.

The below GaAs bandgap (900 nm) excitation carrier dynamic TRPL measurements (a) first, bias dependent (+1.12 V to −1.50 V) TRPL decay traces showing a tunneling at electric fields ( ). (b) Second, temperature dependent (10–290 K) TRPL decay traces under a constant built-in electric field of 54 kV/cm. The insets show the extracted PL lifetimes in semilog scale.

Image of FIG. 5.
FIG. 5.

The above GaAs bandgap (800 nm) excitation carrier dynamic TRPL measurements (a) first, bias dependent (+1.12 V to −1.50 V) TRPL decay traces showing a tunneling at electric fields ( ). (b) Second, temperature dependent (10–290 K) TRPL decay traces under built-in electric field of 54 kV/cm).

Tables

Generic image for table
Table I.

Schematic description of the GaInAsSb QW p-i-n structure with detailed dimensions and doping.

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/content/aip/journal/apl/102/1/10.1063/1.4775371
2013-01-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4775371
10.1063/1.4775371
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