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Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells
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10.1063/1.4775373
/content/aip/journal/apl/102/1/10.1063/1.4775373
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4775373
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic structure of the GaN-based PQC structure with the regrowth of semipolar{10-11} GaN pyramids and 10-pair In0.3Ga0.7 N/GaN (3 nm/12 nm) MQW; (b) Illustrations of the fabrication process of nanoimprint technology and the regrowth process.

Image of FIG. 2.
FIG. 2.

(a) The top-view and (b) the angle-view SEM images of the PQC structure. (c) The cross-sectional SEM image of the PQC structure after the regrowth procedure.

Image of FIG. 3.
FIG. 3.

(a) The measured spectrum of samples A and B above threshold. The lasing wavelength is 366 nm. (b) The light-in light-out (L-L) curve and linewidth narrowing of sample B.

Image of FIG. 4.
FIG. 4.

(a) PL spectra from the PQC structure of sample A (black) and sample B (green) under He-Cd 325 nm CW laser pumping. (b) The photography of the PQC structures on sample B during the experiment, and the white light on the center caused by the pumping light source of the He-Cd laser.

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/content/aip/journal/apl/102/1/10.1063/1.4775373
2013-01-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/1/10.1063/1.4775373
10.1063/1.4775373
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