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Cross-section SEM analysis of AlN growth on Pt/Ti layer on as-grown UNCD substrate (a) and on CMP B-UNCD substrate (b) and the corresponding XRD spectra for each substrate (c) and (d), respectively.
PFM imaging of piezoelectric activity in (002) oriented AlN film (∼200 nm thick) grown on CMP BUNCD with rms surface roughness of about 0.2 nm. The PFM measurement was used to determine the piezoelectric coefficient of the AlN film, which was 5.3 pm/V, one of the highest demonstrated today for AlN.
Sputtering parameters for AlN, Pt, and Ti depositions.
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