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Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices
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10.1063/1.4792238
/content/aip/journal/apl/102/10/10.1063/1.4792238
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4792238

Figures

Image of FIG. 1.
FIG. 1.

Cross-section SEM analysis of AlN growth on Pt/Ti layer on as-grown UNCD substrate (a) and on CMP B-UNCD substrate (b) and the corresponding XRD spectra for each substrate (c) and (d), respectively.

Image of FIG. 2.
FIG. 2.

PFM imaging of piezoelectric activity in (002) oriented AlN film (∼200 nm thick) grown on CMP BUNCD with rms surface roughness of about 0.2 nm. The PFM measurement was used to determine the piezoelectric coefficient of the AlN film, which was 5.3 pm/V, one of the highest demonstrated today for AlN.

Tables

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Table I.

Sputtering parameters for AlN, Pt, and Ti depositions.

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/content/aip/journal/apl/102/10/10.1063/1.4792238
2013-03-12
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4792238
10.1063/1.4792238
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