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Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films
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10.1063/1.4794533
/content/aip/journal/apl/102/10/10.1063/1.4794533
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4794533
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Representative Raman spectra of graphene/BN, BN-only, and graphene-only samples. (b) Raman map over a 40 μm (120 pixel) region of the intensity ratio of the graphene (G′)/BN@1365 cm−1 peaks. (c) HRTEM image of a segment of a graphene/BN thin film with a 4-5 nm gap is showing 4-layers G/8-layers BN. (d) Transistor schematic and biasing with L = 30 μm and W = 100 μm.

Image of FIG. 2.
FIG. 2.

Measured electrical characteristics for a representative graphene/BN transistor test structure shown schematically in Fig. 1(d) : (a) transfer (Id vs. Vgs ) characteristics with near symmetric electron/hole branches of the current and a Dirac point located near 30 V and (b) output (Id vs. Vds ) characteristics showing the onset of saturation-like behavior with Vds > 3 V.

Image of FIG. 3.
FIG. 3.

Measured vs. modeled (a) electron and (b) hole mobility for graphene/BN and graphene/SiO2 samples as a function of the extracted carrier density and the isolated Coulomb, phonon and surface mobility components. There is significantly enhanced carrier mobility for graphene/BN due to a consistent reduction in the substrate induced scattering and an improvement in the surface quality.

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/content/aip/journal/apl/102/10/10.1063/1.4794533
2013-03-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4794533
10.1063/1.4794533
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