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Recovery of the chemical ordering in L10 MnAl epitaxial thin films irradiated by 2 MeV protons
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10.1063/1.4794804
/content/aip/journal/apl/102/10/10.1063/1.4794804
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4794804

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD spectra of a 30 nm thick MnAl film for different irradiation fluences; (b) Chemical ordering as a function of TF.

Image of FIG. 2.
FIG. 2.

(a) Perpendicular normalized magnetization curves of the MnAl film for pre- and post-irradiation measured at room temperature by MOKE. (b) Saturation moment ( M S ) as a function of TF.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the normalized resistances for virgin and irradiated MnAl Hall bar device.

Image of FIG. 4.
FIG. 4.

Hall resistance (Rxy ) vs. Magnetic field (H) measured as a function of total fluence at 300 K. The inset is an optical image of a Hall bar device with the width of 2 μm. The same Hall bar device was measured after each exposure to the proton beam.

Tables

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Table I.

Irradiation procedure and the total fluence.

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Table II.

Chemical ordering (S) and peak parameters of (001) and (002) extracted from XRD spectra of MnAl thin films.

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/content/aip/journal/apl/102/10/10.1063/1.4794804
2013-03-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recovery of the chemical ordering in L10 MnAl epitaxial thin films irradiated by 2 MeV protons
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4794804
10.1063/1.4794804
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