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(a) XRD spectra of a 30 nm thick MnAl film for different irradiation fluences; (b) Chemical ordering as a function of TF.
(a) Perpendicular normalized magnetization curves of the MnAl film for pre- and post-irradiation measured at room temperature by MOKE. (b) Saturation moment ( M S ) as a function of TF.
Temperature dependence of the normalized resistances for virgin and irradiated MnAl Hall bar device.
Hall resistance (Rxy ) vs. Magnetic field (H) measured as a function of total fluence at 300 K. The inset is an optical image of a Hall bar device with the width of 2 μm. The same Hall bar device was measured after each exposure to the proton beam.
Irradiation procedure and the total fluence.
Chemical ordering (S) and peak parameters of (001) and (002) extracted from XRD spectra of MnAl thin films.
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