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Surface phonon polariton characteristic of honeycomb nanoporous GaN thin films
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10.1063/1.4794906
/content/aip/journal/apl/102/10/10.1063/1.4794906
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4794906

Figures

Image of FIG. 1.
FIG. 1.

FESEM top view (left hand side) and cross-sectional (right hand side) images of as-grown GaN ((a), (d)) and nanoporous GaN etched under voltage supply of 10 V ((b), (e)), and 20 V ((c), (f)). The inset figures illustrate the cross-sectional images of porous layer of nanoporous GaN.

Image of FIG. 2.
FIG. 2.

Room temperature p-polarized ATR spectra of undoped GaN, si-doped GaN, and nanoporous GaN fabricated under voltage supply of 10 V and 20 V. The dotted and the solid lines indicate the experimental and the calculated ATR spectra, respectively. The symbols *, #, and + indicate the SPP, the IPP, and the guided wave resonances, respectively.

Tables

Generic image for table
Table I.

Thickness and porosity of two homogeneous honeycomb nanoporous GaN thin films obtained from the model fit of ATR spectra and cross sectional FESEM images.

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/content/aip/journal/apl/102/10/10.1063/1.4794906
2013-03-11
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface phonon polariton characteristic of honeycomb nanoporous GaN thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4794906
10.1063/1.4794906
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