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FESEM top view (left hand side) and cross-sectional (right hand side) images of as-grown GaN ((a), (d)) and nanoporous GaN etched under voltage supply of 10 V ((b), (e)), and 20 V ((c), (f)). The inset figures illustrate the cross-sectional images of porous layer of nanoporous GaN.
Room temperature p-polarized ATR spectra of undoped GaN, si-doped GaN, and nanoporous GaN fabricated under voltage supply of 10 V and 20 V. The dotted and the solid lines indicate the experimental and the calculated ATR spectra, respectively. The symbols *, #, and + indicate the SPP, the IPP, and the guided wave resonances, respectively.
Thickness and porosity of two homogeneous honeycomb nanoporous GaN thin films obtained from the model fit of ATR spectra and cross sectional FESEM images.
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