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(a) Transfer characteristics, (b) shift of threshold voltage under negative bias stress (−20 V) of TIZO TFTs with L = 150 μm and W = 1000 μm, and (c) carrier concentration and Hall mobility of TIZO films as a function of process pressure.
(a) XPS spectra of O1s core level and (b) relative ratio of O2 peak (O2/Ototal) as a function of process pressure.
(a) XPS spectra near valence band, (b) imaginary dielectric function (ε2) measured by SE, and (c) schematic energy level diagram reflecting the relative energy position of the Fermi level (EF) with respect to the conduction band minimum (C.B.) and valence band maximum (V.B.) as a function of process pressure. The corresponding values of the bandgap (Eg) and the relative energy difference between EF and V.B. (ΔEVB) and between EF and C.B. (ΔECB) are indicated below the diagram (c).
(a) Imaginary dielectric function (ε2) spectra from SE measurements for TIZO film deposited in the 1 mTorr. Two distinct deconvoluted peaks, labeled D1 and D2, are Gaussian fits and represent the band edge states located below the conduction band edge. (b) The band edge states over a narrow energy region, below the conduction band edge. (c) Schematic energy level diagrams reflecting the energy level of band edge states (D1 and D2), as a function of process pressure.
TFTs parameters including μFE, I on/off ratio, V th S.S., and N created with width/length = 1000/150 μm as a function of process pressure. The mobility was extracted from maximum transconductance, and Vth was defined by the gate voltage, which induces a drain current of 10 nA at VDS of 5.1 V. The subthreshold gate swing (S.S) was extracted from the linear part of the log(IDS ) vs. VGS plot.
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