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High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials
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10.1063/1.4794943
/content/aip/journal/apl/102/10/10.1063/1.4794943
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4794943
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM and XTEM images (1 μm × 1 μm) of the single-layer (a) Ge QDs, (b) 2-fold, and (c) 3-fold CQDs, in which dome- and pyramid-shaped QDs are denoted by “D” and “P,” respectively.

Image of FIG. 2.
FIG. 2.

AFM images showing the single-layer (a) Ge QDs, (b) 2-fold, and (c) 3-fold CQDs after selective chemical etching for 1 h and (d)–(f) for 5 h, respectively. The inset at the bottom of each figure shows a higher magnification of the representative etched domes and pyramids during etching.

Image of FIG. 3.
FIG. 3.

(a) XTEM micrograph of a thin-film-like CQD material with 40-period 3-fold-CQD/Si stacks. The right column shows high magnification TEM images for a selected CQD near the top stack. (b) Ge-Ge and Si-Ge peaks of the thin-film-like QD, 2-fold-, and 3-fold-CQD materials in the high dispersion Raman spectra.

Image of FIG. 4.
FIG. 4.

Thermal conductivities κ as a function of temperatures for the thin-film-like QD and CQD materials. The inset shows a schematic diagram of the measurement device in this study.

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/content/aip/journal/apl/102/10/10.1063/1.4794943
2013-03-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4794943
10.1063/1.4794943
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