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AFM and XTEM images (1 μm × 1 μm) of the single-layer (a) Ge QDs, (b) 2-fold, and (c) 3-fold CQDs, in which dome- and pyramid-shaped QDs are denoted by “D” and “P,” respectively.
AFM images showing the single-layer (a) Ge QDs, (b) 2-fold, and (c) 3-fold CQDs after selective chemical etching for 1 h and (d)–(f) for 5 h, respectively. The inset at the bottom of each figure shows a higher magnification of the representative etched domes and pyramids during etching.
(a) XTEM micrograph of a thin-film-like CQD material with 40-period 3-fold-CQD/Si stacks. The right column shows high magnification TEM images for a selected CQD near the top stack. (b) Ge-Ge and Si-Ge peaks of the thin-film-like QD, 2-fold-, and 3-fold-CQD materials in the high dispersion Raman spectra.
Thermal conductivities κ ⊥ as a function of temperatures for the thin-film-like QD and CQD materials. The inset shows a schematic diagram of the measurement device in this study.
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