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(a) SEM image of the three etched trenches that form a micropillar mesa connected to the bulk material. (b) SEM cross-sectional image of the center of a micropillar. Al x O y is darker than the Al x layers. (c) Reflection scans (light: high reflectivity) taken with a 1064 nm laser for different temperatures at the corner of an etched trench (white box in Fig. 3 shows this corner for a different micropillar). (d) Reflectivity as a function of the distance along the white lines in (c).
(a) Reflectivity scan (light: high reflectivity) of a 1064 nm laser on an etched micropillar before the oxidation was started. (b)–(e) Reflectivity scans for different times after the oxidation was started. Every scan takes about 1.5 min. (f) Reflectivity scan taken after the oxidation was stopped after 29.5 min.
Reflectivity scan (light: high reflectivity) of the same micropillar as in Fig. 2 , taken over a larger region at room temperature.
(a) Reflectivity scans (light: lower reflectivity) for the indicated wavelengths, between 955.5 and 957.5 nm, as a function of position in the center of a micropillar. (b) Reflection spectra at the six positions that are marked with a black dot and labelled with numbers 1–6. An offset is added between each trace. The red line in curve 1 is a fit to determine the Q-factor of the mode.
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