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Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy
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Image of FIG. 1.
FIG. 1.

(a) Concentrations of Sb and O in atomic % together with the III/V atomic ratio, [Ga]/([Sb] + [N]) of the films grown at substrate temperature ranging from 80–470 °C, (b) the incorporation of Sb in GaN1−xSbx and group III/V ratio for films grown at 80 °C with increasing Sb BEP.

Image of FIG. 2.
FIG. 2.

(a) XRD patterns for GaN1−xSbx samples grown at 80 °C with 0, 1.5, 4.3, and 7.2 at. % of Sb. (b) XRD patterns of GaN1−xSbx sample grown at different substrate temperature with similar Ga and Sb BEP.

Image of FIG. 3.
FIG. 3.

(a) Cross section TEM image of the sample grown at 80 °C with no Sb together with the selected aread electron diffraction pattern, (b) low and high resolution (inset) cross sectional TEM image and SAD pattern from a film with 4.3 at. % of Sb grown at 80 °C.

Image of FIG. 4.
FIG. 4.

(a) Absorption coefficients α as a function photon energy for films with different Sb content (in at. %). The inset shows the square of the product of α and energy, (hν∗α) 2 for samples with different Sb content. (b) Absorption edge energies for GaN1−xSbx alloys with different Sb content obtained by linear extrapolation of the curves in (a).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy