1 School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, People's Republic of China
ZnMnO filmscodoped with Ga, Cr, and Fe were deposited on sapphire substrates via pulsed laser deposition. The structures, magnetization, and transport properties of p-type ZnMnO films can be tuned using n-type Ga, Cr, and Fe codopants. The Coulombic attraction between n- and p-type dopants favorably decreases the energy of system, thereby preventing dopant aggregation and effectively enhancing dopant solubility. The above noncompensated n–pcodoping can provide a certain amount of carrier density and local spins and results in the room temperature magnetizations and low temperature positive or negative magnetoresistances in ZnO wide gap semiconductors.
Received 15 February 2013Accepted 04 March 2013Published online 12 March 2013
The authors would like to express their thanks to the National Science Fund for Distinguished Young Scholars of China (No. 51025101), the National Natural Science Foundation of China (Nos. 11274214 and 61204097), the Ministry of Education of China (Grant Nos. 20101404120002, 20121404130001, and IRT 1156) and the Youth Science Foundation of Shanxi (2012021020-2).
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