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Arrhenius fitting plots of Ge2Sb2Te5, Ge0.15Sb2Te, and Ge0.61Sb2Te for evaluating data retention; inset is the curves of sheet resistance as a function of the temperature for these three compositions with the heating rate of 20 °C/min.
XPS spectra of Sb2Te and Ge0.61Sb2Te films after etching for eliminating O element influence: (a) Sb 3d, (b) Te 3d.
XRD pattern of the annealed films at 250 °C for 5 min in N2 atmosphere: (a) for Sb2Te and (b) for Ge0.15Sb2Te and Ge0.61Sb2Te films.
The Ge0.61Sb2Te film annealed at 250 °C for 5 min in N2 atmosphere for (a) the bright field TEM image, (b) the SAED pattern, (c) and (d) the HRTEM images.
(a) SET and RESET performance of PCRAM cell based on Ge0.61Sb2Te with various pulse widths; (b) reversible switching endurance characteristics of Ge0.61Sb2Te-based cell.
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