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Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory
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10.1063/1.4795595
/content/aip/journal/apl/102/10/10.1063/1.4795595
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4795595
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Arrhenius fitting plots of Ge2Sb2Te5, Ge0.15Sb2Te, and Ge0.61Sb2Te for evaluating data retention; inset is the curves of sheet resistance as a function of the temperature for these three compositions with the heating rate of 20 °C/min.

Image of FIG. 2.
FIG. 2.

XPS spectra of Sb2Te and Ge0.61Sb2Te films after etching for eliminating O element influence: (a) Sb 3d, (b) Te 3d.

Image of FIG. 3.
FIG. 3.

XRD pattern of the annealed films at 250 °C for 5 min in N2 atmosphere: (a) for Sb2Te and (b) for Ge0.15Sb2Te and Ge0.61Sb2Te films.

Image of FIG. 4.
FIG. 4.

The Ge0.61Sb2Te film annealed at 250 °C for 5 min in N2 atmosphere for (a) the bright field TEM image, (b) the SAED pattern, (c) and (d) the HRTEM images.

Image of FIG. 5.
FIG. 5.

(a) SET and RESET performance of PCRAM cell based on Ge0.61Sb2Te with various pulse widths; (b) reversible switching endurance characteristics of Ge0.61Sb2Te-based cell.

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/content/aip/journal/apl/102/10/10.1063/1.4795595
2013-03-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/10/10.1063/1.4795595
10.1063/1.4795595
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