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Influence of exciton lifetime on charge carrier dynamics in an organic heterostructure
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Figures

Image of FIG. 1.

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FIG. 1.

(a) Performance characteristics for a typical metal-insulator-metal device used in the study. Inset: Device structure with corresponding layer thicknesses for the MIM structure. (b) EQE as function of current density for a standard OLED (solid line) on ITO coated glass, compared to that for an MIM device (dotted line). The kink in EQE at 0.5 mA/cm2 and 6 mA/cm2 for the metal and standard devices, respectively, is due to apparatus artifact. Inset: Image of an electrically biased crossbar MIM OLED used in the study.

Image of FIG. 2.

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FIG. 2.

(a) Simulation results for guided power distribution through each mode as a function of MoO3 capping layer thickness (b) Modulation in relative decay rate for different dipole orientations at the interface. The red (dotted-dashed-dotted) line corresponds to a plane-perpendicular orientation; the blue (dashed) line corresponds to a plane-parallel orientation, whereas the black (solid) line corresponds to an average of the two, assuming two-thirds of the emitters are positioned plane-parallel according to symmetry.

Image of FIG. 3.

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FIG. 3.

Modeled decay rates (solid line) and experimental current densities at 7 V bias (dots) for devices having varying capping layer thicknesses. The y-axis corresponds to the average values of the normalized current densities at 7 V for each device with the error bars representing the standard deviations across the set of devices tested for each thickness. Inset: Device structure used for current density measurements.

Image of FIG. 4.

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FIG. 4.

Absolute values of current density at 7 V bias for the devices shown in Fig. 3 , plotted against their corresponding semi-empirical decay rates. The plot suggests that the measured variations in current density are directly proportional to the corresponding singlet exciton decay rate.

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/content/aip/journal/apl/102/11/10.1063/1.4795523
2013-03-21
2014-04-25

Abstract

Interactions between charge carriers and excitons, as well as between excitons and optical cavity modes in organic optoelectronic devices are fundamental to their operational limits and chief in preventing the realization of certain phenomena, such as electrically pumped organic lasing. We uncovered a previously unreported phenomenon, wherein optical cavity-modulated exciton decay rate leads to a concomitant modulation in the electrical current of an archetypal NPD/Alq3 organic light emitting device operated in forward bias. The magnitude of this variation is sensitive to the local dielectric environment of the device and is found to be as large as 15%.

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Scitation: Influence of exciton lifetime on charge carrier dynamics in an organic heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4795523
10.1063/1.4795523
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