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The part of Si-CH3 bonds remaining after the CVD1 (a) and ALK B (b) films exposure to EUV/VUV photons as functions of the fluence. Symbols indicate experimental data; lines indicate model results.
Derived photoabsorption cross-sections for four OSG films as functions of the emission wavelength.
The averaged (over four OSG films) photodissociation cross-section, quantum yield, photoabsorption cross-section, and penetration depth l PA(λ) = 2.3/(σPA[Si]) as function of the wavelength.
Characteristics of the OSG films (CVD1, CVD3, NCS, ALK B) under study.
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