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Modification of organosilicate glasses low-k films under extreme and vacuum ultraviolet radiation
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10.1063/1.4795792
/content/aip/journal/apl/102/11/10.1063/1.4795792
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4795792

Figures

Image of FIG. 1.
FIG. 1.

The part of Si-CH3 bonds remaining after the CVD1 (a) and ALK B (b) films exposure to EUV/VUV photons as functions of the fluence. Symbols indicate experimental data; lines indicate model results.

Image of FIG. 2.
FIG. 2.

Derived photoabsorption cross-sections for four OSG films as functions of the emission wavelength.

Image of FIG. 3.
FIG. 3.

The averaged (over four OSG films) photodissociation cross-section, quantum yield, photoabsorption cross-section, and penetration depth l PA(λ) = 2.3/(σPA[Si]) as function of the wavelength.

Tables

Generic image for table
Table I.

Characteristics of the OSG films (CVD1, CVD3, NCS, ALK B) under study.

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/content/aip/journal/apl/102/11/10.1063/1.4795792
2013-03-18
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modification of organosilicate glasses low-k films under extreme and vacuum ultraviolet radiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4795792
10.1063/1.4795792
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