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PL spectra measured at RT (solid lines) and 14 K (dashed lines) for the reference InGaAs (black), intrinsic InGaAsSb (blue), and p-i-n InGaAsSb (red) QW samples.
Measured (004) X-ray rocking curves of the intrinsic (black) and p-i-n (red) samples, both grown with MBE using the Sb pre-deposition method under same conditions.
Evolution of the PL peak energy for all three QWs in the temperature of 14 K–290 K under low (full) and high (open) excitation power intensities for reference InGaAs (black), intrinsic InGaAsSb (blue), and p-i-n InGaAsSb (red) QW samples.
Temperature dependent carrier localization energies for the intrinsic sample (black) and the p-i-n sample (red).
A cross-sectional TEM image of the (a) intrinsic QW sample and (b)p-i-n QW sample showing better QW quality.
p-i-n sample structure with target dimensions and doping description.
Characteristics of the samples: The In-content xIn and the Sb-content ySb are determined by x-ray diffraction. The E(RT) and E(14 K) stand for RT and 14 K PL energies; ΔE denotes the redshift between 14 K and RT; and FWHM stands for the PL linewidth.
The Varshni model parameters E(0), α, β; Eloc(14 K) denotes the localization energy at 14 K; is the maximum localization energy, and Tdeloc stands for the full delocalization energy.
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