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Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition
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10.1063/1.4795866
/content/aip/journal/apl/102/11/10.1063/1.4795866
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4795866

Figures

Image of FIG. 1.
FIG. 1.

PL spectra measured at RT (solid lines) and 14 K (dashed lines) for the reference InGaAs (black), intrinsic InGaAsSb (blue), and p-i-n InGaAsSb (red) QW samples.

Image of FIG. 2.
FIG. 2.

Measured (004) X-ray rocking curves of the intrinsic (black) and p-i-n (red) samples, both grown with MBE using the Sb pre-deposition method under same conditions.

Image of FIG. 3.
FIG. 3.

Evolution of the PL peak energy for all three QWs in the temperature of 14 K–290 K under low (full) and high (open) excitation power intensities for reference InGaAs (black), intrinsic InGaAsSb (blue), and p-i-n InGaAsSb (red) QW samples.

Image of FIG. 4.
FIG. 4.

Temperature dependent carrier localization energies for the intrinsic sample (black) and the p-i-n sample (red).

Image of FIG. 5.
FIG. 5.

A cross-sectional TEM image of the (a) intrinsic QW sample and (b)p-i-n QW sample showing better QW quality.

Tables

Generic image for table
Table I.

p-i-n sample structure with target dimensions and doping description.

Generic image for table
Table II.

Characteristics of the samples: The In-content xIn and the Sb-content ySb are determined by x-ray diffraction. The E(RT) and E(14 K) stand for RT and 14 K PL energies; ΔE denotes the redshift between 14 K and RT; and FWHM stands for the PL linewidth.

Generic image for table
Table III.

The Varshni model parameters E(0), α, β; Eloc(14 K) denotes the localization energy at 14 K; is the maximum localization energy, and Tdeloc stands for the full delocalization energy.

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/content/aip/journal/apl/102/11/10.1063/1.4795866
2013-03-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4795866
10.1063/1.4795866
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