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Bandgap narrowing in high dopant tin oxide degenerate thin film produced by atmosphere pressure chemical vapor deposition
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10.1063/1.4798253
/content/aip/journal/apl/102/11/10.1063/1.4798253
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4798253

Figures

Image of FIG. 1.
FIG. 1.

(a) Sheet resistance and resistivity at different R values at 450 °C and 500 °C. (b) Variation in mobility and carrier concentration as a function of R at 450 °C and 500 °C. (c) EPMA film data at 450 °C and 500 °C. (d) Average transmittance of antimony-doped tin oxide thin-film at deposition temperatures of 450 °C and 500 °C.

Image of FIG. 2.
FIG. 2.

The figure of merit at various flow rates at 450 °C and 500 °C.

Image of FIG. 3.
FIG. 3.

Bandgap shift at various R values at (a) 450 °C and (b) 500 °C.

Image of FIG. 4.
FIG. 4.

Bandgap shift calculated at various R values at (a) 450 °C and (b) 500 °C.

Tables

Generic image for table
Table I.

Grain size of ATO thin film calculated using GIXRD.

Generic image for table
Table II.

Mean free path of ATO thin film at 450 °C and 500 °C.

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/content/aip/journal/apl/102/11/10.1063/1.4798253
2013-03-22
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bandgap narrowing in high dopant tin oxide degenerate thin film produced by atmosphere pressure chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4798253
10.1063/1.4798253
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