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TEM and SEM (insets) micrographs showing typical core/shell grains after sintering of (a) Dy-doped BaTiO3 (Dy-BT) at 1300 °C for 30 min, (b) Ho-doped BaTiO3 (Ho-BT) at 1350 °C for 1 h, and (c) Er-doped BaTiO3 (Er-BT) at 1300 °C for 30 min. The upper inset in (a) is an inverse Fourier transformed HRTEM image showing an atomic mismatch near the core/shell interface.
Hall-Williamson plots for sintered Dy-BT, Ho-BT, and Er-BT samples.
Temperature dependences of dielectric permittivity and tangent loss at 1 kHz of Dy-BT, Ho-BT, and Er-BT samples in a temperature range from −55 to 150 °C. Plots of ln (1/ε − 1/εmax) vs ln (T − T max) for Dy-BT and Ho-BT are shown in the inset.
Frequency and temperature dependences of the dielectric permittivity of (a) Ho-BT and (b) Dy-BT in a frequency range from 1 kHz to 1 MHz and a temperature range from −55 to 150 °C. The inset in Fig. 4(a) is a Vogel-Fulcher fit showing the frequency dependent T m of Ho-BT.
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