banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Coherency strain enhanced dielectric-temperature property of rare-earth doped BaTiO3
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

TEM and SEM (insets) micrographs showing typical core/shell grains after sintering of (a) Dy-doped BaTiO3 (Dy-BT) at 1300 °C for 30 min, (b) Ho-doped BaTiO3 (Ho-BT) at 1350 °C for 1 h, and (c) Er-doped BaTiO3 (Er-BT) at 1300 °C for 30 min. The upper inset in (a) is an inverse Fourier transformed HRTEM image showing an atomic mismatch near the core/shell interface.

Image of FIG. 2.
FIG. 2.

Hall-Williamson plots for sintered Dy-BT, Ho-BT, and Er-BT samples.

Image of FIG. 3.
FIG. 3.

Temperature dependences of dielectric permittivity and tangent loss at 1 kHz of Dy-BT, Ho-BT, and Er-BT samples in a temperature range from −55 to 150 °C. Plots of ln (1/ε − 1/εmax) vs ln (T − T max) for Dy-BT and Ho-BT are shown in the inset.

Image of FIG. 4.
FIG. 4.

Frequency and temperature dependences of the dielectric permittivity of (a) Ho-BT and (b) Dy-BT in a frequency range from 1 kHz to 1 MHz and a temperature range from −55 to 150 °C. The inset in Fig. 4(a) is a Vogel-Fulcher fit showing the frequency dependent T m of Ho-BT.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coherency strain enhanced dielectric-temperature property of rare-earth doped BaTiO3