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The material dependence of temperature measurement resolution in thermal scanning electron microscopy
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10.1063/1.4798285
/content/aip/journal/apl/102/11/10.1063/1.4798285
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4798285
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Instrument setup (inside view of the JEOL JEM 840 SEM chamber showing SEM column, EBSD detector and heating stage with silicon and germanium samples mounted).

Image of FIG. 2.
FIG. 2.

(a) and (c) EBSD patterns for Si and Ge {100} wafers; (b) and (d) zoomed-in views of (a) and (c) with scan line location across a (400) Kikuchi line indicated.

Image of FIG. 3.
FIG. 3.

Normalized peak intensity versus temperature for a (400) Kikuchi line from the Si {100} sample.

Image of FIG. 4.
FIG. 4.

Normalized peak intensity versus temperature for Si (400) R 2 = 0.986 and Ge (400) R 2 = 0.990 Kikuchi lines from single crystal Si and Ge {100} samples and calculated curve from the Debye-Waller factor.

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/content/aip/journal/apl/102/11/10.1063/1.4798285
2013-03-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The material dependence of temperature measurement resolution in thermal scanning electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4798285
10.1063/1.4798285
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