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Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect
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10.1063/1.4798288
/content/aip/journal/apl/102/11/10.1063/1.4798288
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4798288
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagrams of model system: (left) CIP geometry utilizing spin transfer torque from the spin Hall effect; (right) CPP geometry utilizing conventional spin transfer torque. Time-dependent change in magnetization components for (b) in-plane current-induced perpendicular switching due to the spin Hall effect (=CIP geometry) and (c) conventional current-induced perpendicular switching (=CPP geometry). For (b) and (c), following modeling parameters are used; α = 0.1, H K,eff = 0.4 T, H x = 200 Oe, D = 30 nm, and t F = 1 nm.

Image of FIG. 2.
FIG. 2.

(a) Switching current as a function of the damping constant α. Time-dependent change in magnetization components for (b) α = 0.028 and (c) α = 0.03. Following modeling parameters are used; H K,eff = 0.469 T, H x = 200 Oe, D = 30 nm, and t F = 1 nm. Top panels in (b) and (c) show the current-pulse profile (pulse width = 5 ns and rise/fall time = 0.5 ns).

Image of FIG. 3.
FIG. 3.

Numerical results of the switching current as a function of (a) H K,eff and (b) H x. (c) Errors of the analytical expressions (Eqs. (5) and (6) ) of threshold switching current density as a function of the thermal stability factor ΔSH. The errors and ΔSH are defined in the main text. (d) Switching current density as a function of . The following parameters are used for (d): ΔSH = 40, H x = 1000 Oe, θ SH = 0.3, D = 30 nm, and t F = 1 nm.

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/content/aip/journal/apl/102/11/10.1063/1.4798288
2013-03-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4798288
10.1063/1.4798288
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