1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Capacitance–voltage analysis of LaAlO3/SrTiO3 heterostructures
Rent:
Rent this article for
USD
10.1063/1.4798334
/content/aip/journal/apl/102/11/10.1063/1.4798334
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4798334
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the device structure. (b) I–V curve between two Al lead wires connected to 2DEG.

Image of FIG. 2.
FIG. 2.

(a) Series circuit model comprising a resistor and a capacitor inseries. (b) Parallel circuit model comprising a resistor and a capacitor in parallel. C–V curves of the LAO/STO heterostructure based on (c) the series and (d) parallel circuit models.

Image of FIG. 3.
FIG. 3.

Nyquist plots of the LAO/STO heterostructure (a) above and (b) below −1.8 V. Inset of Fig. 3(a): magnified Nyquist plot of the high-frequency range. Calculated capacitance of (c) LAO and (d) STO layers as functions of the applied voltage.

Image of FIG. 4.
FIG. 4.

Variation in the capacitance of the LAO/STO heterostructure as a function of the applied voltage. The C–V curve is also compared to CS–V curves on the basis of the series circuit model shown in Fig. 2(c) .

Loading

Article metrics loading...

/content/aip/journal/apl/102/11/10.1063/1.4798334
2013-03-20
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitance–voltage analysis of LaAlO3/SrTiO3 heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4798334
10.1063/1.4798334
SEARCH_EXPAND_ITEM