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Bias stress effect in polyelectrolyte-gated organic field-effect transistors
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/content/aip/journal/apl/102/11/10.1063/1.4798512
2013-03-21
2014-07-23

Abstract

A main factor contributing to bias stress instability in organic transistors is charge trapping of mobile carriers near the gate insulator-semiconductor interface into localized electronic states. In this paper, we study the bias stress behavior in low-voltage (p-type) polyelectrolyte-gated organic field effect transistors (EGOFETs) at various temperatures. Stressing and recovery in these EGOFETs are found to occur six orders of magntiude faster than typical bias stress/recovery reported for dielectric-gated OFETs. The mechanism proposed for EGOFETs involves an electron transfer reaction between water and the charged semiconductor channel that promotes the creation of extra protons diffusing into the polyelectrolyte.

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Scitation: Bias stress effect in polyelectrolyte-gated organic field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/11/10.1063/1.4798512
10.1063/1.4798512
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