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Multi-level memory-switching properties of a single brain microtubule
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Abstract
We demonstrate that a single brain-neuron-extracted microtubule is a memory-switching element, whose hysteresis loss is nearly zero. Our study shows how a memory-state forms in the nanowire and how its protein arrangement symmetry is related to the conducting-state written in the device, thus, enabling it to store and process ∼500 distinct bits, with 2 pA resolution between 1 nA and 1 pA. Its random access memory is an analogue of flash memory switch used in a computer chip. Using scanning tunneling microscope imaging, we demonstrate how single proteins behave inside the nanowire when this 3.5 billion years old nanowire processes memory-bits.
© 2013 American Institute of Physics
Received 31 October 2012
Accepted 18 February 2013
Published online 26 March 2013
Acknowledgments:
Authors acknowledge Eiichiro Watanabe and Daiju Tsuya of Nanotechnology Innovation Station, NIMS Sengen-site Nano-oundry sponsored by Ministry of Science, Education, Culture and Sports (MEXT), Govt. of Japan. The current research work was funded by Asian office of Aerospace R&D, Govt. of USA FA2386-11-1-0001AOARD104173 and FA2386-10-1-4059 AOARD-10-4059.
There is no competing financial interest among the authors.
A.B. designed research; S.S. designed and built the microtubule device; S.S., A.B, K.H., and S.G, performed the experiments; A.B. and S.S. analyzed the data; A.B. wrote the paper; and D.F. reviewed the work.
/content/aip/journal/apl/102/12/10.1063/1.4793995
6.
6. B. Simic Glavasky, “ Molecular electro-optical transistor and switch,” U.S. patent 4,804,930 (14 February 1989).
7.
7. B. Simic Glavasky, “ Molecular architecture for molecular electro-optical transistor and switch,” U.S. patent 7,136,212 (14 November 2006).
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2013-03-26
2015-07-24
Abstract
We demonstrate that a single brain-neuron-extracted microtubule is a memory-switching element, whose hysteresis loss is nearly zero. Our study shows how a memory-state forms in the nanowire and how its protein arrangement symmetry is related to the conducting-state written in the device, thus, enabling it to store and process ∼500 distinct bits, with 2 pA resolution between 1 nA and 1 pA. Its random access memory is an analogue of flash memory switch used in a computer chip. Using scanning tunneling microscope imaging, we demonstrate how single proteins behave inside the nanowire when this 3.5 billion years old nanowire processes memory-bits.
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