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Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies
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10.1063/1.4794419
/content/aip/journal/apl/102/12/10.1063/1.4794419
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4794419
/content/aip/journal/apl/102/12/10.1063/1.4794419
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/content/aip/journal/apl/102/12/10.1063/1.4794419
2013-03-26
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4794419
10.1063/1.4794419
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