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Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies
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10.1063/1.4794419
/content/aip/journal/apl/102/12/10.1063/1.4794419
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4794419

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic cross section of the IZO TFT and (b) the optical spectrum of LED backlight and the absorption spectrum of a representative IZO film.

Image of FIG. 2.
FIG. 2.

X-ray diffraction patterns for IZO films with different indium ratio.

Image of FIG. 3.
FIG. 3.

Transfer characteristics of as-fabricated, air annealed, and oxygen HPA treated IZO TFT, respectively.

Image of FIG. 4.
FIG. 4.

(a) Absorption spectra of as-deposited, air annealed, and HPA treated IZO films and (b) DOS plot extracted from PECCS measurement for resulting TFTs.

Image of FIG. 5.
FIG. 5.

VT shift (|ΔVT|) as a function of the applied NBTS time with light illumination for air annealed and oxygen HPA treated TFT.

Tables

Generic image for table
Table I.

Optical parameters for the IZO films with different indium ratio and electrical characteristics of resulting IZO TFTs.

Generic image for table
Table II.

VT shifts under NBTS with light illumination and the stretched exponential parameters for air annealed and oxygen HPA treated TFTs.

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/content/aip/journal/apl/102/12/10.1063/1.4794419
2013-03-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4794419
10.1063/1.4794419
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