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GaAs/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation
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10.1063/1.4798329
/content/aip/journal/apl/102/12/10.1063/1.4798329
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798329
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Device structure of the 2DEG THz detector. (b) Schematic representation of the mechanism for the THz detection and modulation. (c) Sketch of the measurement system.

Image of FIG. 2.
FIG. 2.

THz detected signal V sig versus magnetic field at f = 0.7, 1.4, 1.8, 2.6, and 3.1 THz.

Image of FIG. 3.
FIG. 3.

R sd as a function of magnetic field at V g = 0, 40, and 80 V.

Image of FIG. 4.
FIG. 4.

Vsig (upper panels) and Rsd (lower panels) versus magnetic field at Vg  = 0, 40, 80, and 120 V. The left and right results were taken at f = 1.6 and 3.1 THz, respectively. The dashed lines indicate the resonance condition, and the arrows denote the minimum of the Rsd .

Image of FIG. 5.
FIG. 5.

Time trace of Vsig as the square wave of Vg between 80 V and −80 V was applied.

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/content/aip/journal/apl/102/12/10.1063/1.4798329
2013-03-25
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798329
10.1063/1.4798329
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