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Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
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10.1063/1.4798519
/content/aip/journal/apl/102/12/10.1063/1.4798519
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798519

Figures

Image of FIG. 1.
FIG. 1.

Transfer curves of IZO TFTs without and with ELA (30 mJ/cm2 and 97.5 mJ/cm2). The F for IZO film deposition was 10%.

Image of FIG. 2.
FIG. 2.

Temperature calculated using thermal diffusion simulator of IZO/SiO2/Si stacked samples plotted against laser energy density. The square, circle, and triangle show the temperatures on the IZO surface, at the IZO/SiO2 interface, and on the Si substrate surface, when IZO was deposited at F = 10%. The broken line indicates the limit of the stable temperature of the IZO film composition.

Image of FIG. 3.
FIG. 3.

1s spectra measured by XPS (a) without ELA and (b) with ELA at (b) 97.5 mJ/cm2.

Image of FIG. 4.
FIG. 4.

Film thickness calculated using XRR plotted against laser energy density. The stacked structure used in this model fitting is shown on the right side.

Tables

Generic image for table
Table I.

Absorption coefficient and penetration length of InZnO film for the light with a wavelength of 308 nm measured by spectroscopic ellipsometry.

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/content/aip/journal/apl/102/12/10.1063/1.4798519
2013-03-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798519
10.1063/1.4798519
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