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Transfer curves of IZO TFTs without and with ELA (30 mJ/cm2 and 97.5 mJ/cm2). The F for IZO film deposition was 10%.
Temperature calculated using thermal diffusion simulator of IZO/SiO2/Si stacked samples plotted against laser energy density. The square, circle, and triangle show the temperatures on the IZO surface, at the IZO/SiO2 interface, and on the Si substrate surface, when IZO was deposited at F = 10%. The broken line indicates the limit of the stable temperature of the IZO film composition.
1s spectra measured by XPS (a) without ELA and (b) with ELA at (b) 97.5 mJ/cm2.
Film thickness calculated using XRR plotted against laser energy density. The stacked structure used in this model fitting is shown on the right side.
Absorption coefficient and penetration length of InZnO film for the light with a wavelength of 308 nm measured by spectroscopic ellipsometry.
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